| Part Number | IRFB9N60 |
| Manufacturer | International Rectifier |
| Title | Power MOSFET |
| Description | Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, ... |
| Features |
ent Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 srew
Max.
9.2 5.8 37 170 1.3 ± 30 290 9.2 17 5.0 -55 to + 150 300 (1.6mm from case ) 10 lbf •in (1.1N •m) Units A W W/°C V ... |
| Published | Apr 16, 2005 |
| Datasheet |
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