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PD- 91873
IRFC240
HEXFET® Power
MOSFET Die in Wafer Form
D
G S
200 V Size 4.
0 Rds(on)=0.
18Ω 5" Wafer
Electrical Characteristics ( Wafer Form )
Parameter V(BR)DSS RDS(on) VGS(th) IDSS IGSS TJ TSTG Description Drain-to-Source Breakdown
Voltage Static Drain-to-Source On-Resistance Gate Threshold
Voltage Drain-to-Source Leakage Current Gate-to-Source Leakage Operating Junction and Storage Temperature Range Guaranteed (Min/Max) 200V Min.
0.
180Ω Max.
2.
3V Min.
, 4.
0V Max.
25µA Max.
± 10µA Max.
125°C Max.
Test Conditions VGS = 0V, ID = 100µA VGS = 10V, ID = 10A VDS = VGS, ID = 250µA VDS = 200V, VGS = 0V, TJ = 25°C VGS = ±20V
Mechanical Data
Nominal Backmetal Composition, Th...