Power
MOSFET
IRFI620G, SiHFI620G
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) Qg (Max.
) (nC) Qgs (nC) Qgd (nC) Configuration
200 VGS = 10 V
14 3.
0 7.
9 Single
0.
80
TO-220 FULLPAK
D
G
GDS
S N-Channel
MOSFET
FEATURES
• Isolated Package
• High
Voltage Isolation = 2.
5 kVRMS (t = 60 s;
Available
f = 60 Hz)
RoHS*
• Sink to Lead Creepage Distance = 4.
8 mm
COMPLIANT
• Dynamic dV/dt Rating
• Low Thermal Resistance
• Lead (Pb)-free Available
DESCRIPTION
Third generation Power
MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The TO-220 FULLPAK eliminates the need for add...