PD- 91381A
IRFL4105
HEXFET® Power
MOSFET
l l l l l l
Surface Mount Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating Fast Switching Fully Avalanche Rated
D
VDSS = 55V RDS(on) = 0.
045Ω
G
ID = 3.
7A
S
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The SOT-223 package is designed for surface-mount using vapor phase, ...