PD - 91343B
IRFP140N
HEXFET® Power
MOSFET
l l l l l
Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated
D
VDSS = 100V
G S
RDS(on) = 0.
052Ω ID = 33A
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.
The TO-247 package is preferred for commercial-industrial applications where higher powe...