Typical Applications l Telecom applications requiring soft start
Benefits l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free
Description
This Stripe Planar design of HEXFET® Power
MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area.
Additional features of this HEXFET power
MOSFET are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.
These benefits combine to make this design an extremely efficient and reliable device for use in a wide variety of applications...