SMPS
MOSFET
PD- 95063A
IRFR220NPbF IRFU220NPbF
HEXFET® Power
MOSFET
Applications l High frequency DC-DC converters l Lead-Free
VDSS RDS(on) max (mΩ) ID
200V
600
5.
0A
Benefits l Low Gate to Drain Charge to Reduce
Switching Losses l Fully Characterized Capacitance Including
Effective COSS to Simplify Design, (See App.
Note AN1001) l Fully Characterized Avalanche
Voltage and Current
D-Pak IRFR22ON
I-Pak IRFU220N
Absolute Maximum Ratings
ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C
VGS dv/dt TJ TSTG
Parameter Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source
Voltage Peak Diode Rec...