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PD - 95943A
AUTOMOTIVE
MOSFET
IRFR2905ZPbF IRFU2905ZPbF
HEXFET® Power
MOSFET
D
Features
l l l l l l
Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free
VDSS = 55V
G S
RDS(on) = 14.
5mΩ ID = 42A
Description
Specifically designed for Automotive applications, this HEXFET® Power
MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.
Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating .
These features combine to make this design an extremel...