IRFS530A

Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area 175 C Operating Temperature Lower Leakage Current : 10 µ A (Max.) @ VDS = 100V Lower RDS(ON) : 0.092 Ω(Typ.) 1 Ο IRFS530A BVDSS = 100 V RDS(on) = 0.11 Ω ID = 10.7 A TO-220F 2 3 1.Gate 2. Drain 3...