INCHANGE Semiconductor
isc N-Channel
MOSFET Transistor
isc Product Specification
IRFS640A
FEATURES ·Avalanche Rugged Technology ·Rugged Gate Oxide Technology ·Lower Input Capacitance ·Improved Gate Charge ·Extended Safe Operating Area ·Lower Leakage Current : 10 A (Max.
) @ VDS = 200V
DESCRIPTION ·Designed for use in switch mode power supplies and general
purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VDSS
Drain-Source
Voltage
VGS Gate-Source
Voltage-Continuous
ID Drain Current-Continuous
IDM Drain Current-Single Pluse PD Total Dissipation @TC=25℃
TJ Max.
Operating Junction Temperature Tstg Storage Temperature
VALUE UNIT
200 ±30
V V
9.
8 A
72 A
43 W
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