INCHANGE Semiconductor
isc N-Channel
MOSFET Transistor
isc Product Specification
IRFS730A
FEATURES ·Avalanche Rugged Technology ·Rugged Gate Oxide Technology ·Lower Input Capacitance ·Improved Gate Charge ·Extended Safe Operating Area
DESCRIPTION ·Designed for use in switch mode power supplies and general
purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VDSS
Drain-Source
Voltage
VGS Gate-Source
Voltage-Continuous
ID Drain Current-Continuous
IDM Drain Current-Single Pluse PD Total Dissipation @TC=25℃
TJ Max.
Operating Junction Temperature Tstg Storage Temperature
VALUE UNIT
400 V
±30
V
3.
9 A
22 A
38 W
-55~150 ℃
-55~150 ℃
THERMAL CHARACTERISTICS
SYM...