Part Number
|
IRG4BC20K-S |
Manufacturer
|
IRF |
Description
|
INSULATED GATE BIPOLAR TRANSISTOR |
Published
|
Aug 23, 2005 |
Detailed Description
|
PD - 91620A
IRG4BC20K-S
INSULATED GATE BIPOLAR TRANSISTOR
Features
• High short circuit rating optimized for motor cont...
|
Datasheet
|
IRG4BC20K-S
|
Overview
PD - 91620A
IRG4BC20K-S
INSULATED GATE BIPOLAR TRANSISTOR
Features
• High short circuit rating optimized for motor control, tsc =10µs, @360V VCE (start), TJ = 125°C, VGE = 15V • Combines low conduction losses with high switching speed • Latest generation design provides tighter parameter distribution and higher efficiency than previous generations
C
Short Circuit Rated UltraFast IGBT
VCES = 600V
G E
VCE(on) typ.
= 2.
27V
@VGE = 15V, IC = 9.
0A
n-channel
Benefits
• As a Freewheeling Diode we recommend our HEXFREDTM ultrafast, ultrasoft recovery diodes for minimum EMI / Noise and switching losses in the Diode and IGBT • Latest generation 4 IGBTs offer highest power density motor controls po...
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