PD- 91793
IRG4BC20SD
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Features
• Extremely low
voltage drop 1.
4Vtyp.
@ 10A • S-Series: Minimizes power dissipation at up to 3 KHz PWM frequency in inverter drives, up to 4 KHz in brushless DC drives.
• Very Tight Vce(on) distribution • IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations • Industry standard TO-220AB package
C
Standard Speed IGBT
VCES = 600V
G E
VCE(on) typ.
= 1.
4V
@VGE = 15V, IC = 10A
n-cha nn el
Benefits
• Generation 4 IGBT's offer highest efficiencies available • IGBT's optimized for specific application conditions • HEXFRED diodes optim...