Part Number
|
IRG4BC20UD-S |
Manufacturer
|
IRF |
Description
|
INSULATED GATE BIPOLAR TRANSISTOR |
Published
|
Aug 23, 2005 |
Detailed Description
|
PD- 94077
IRG4BC20UD-S
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Features
• UltraFast: Optim...
|
Datasheet
|
IRG4BC20UD-S
|
Overview
PD- 94077
IRG4BC20UD-S
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Features
• UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, 200kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations • Industry standard D2Pak package
C
UltraFast CoPack IGBT
VCES = 600V
G E
VCE(on) typ.
= 1.
85V
@VGE = 15V, IC = 6.
5A
N-channel
Benefits
• Generation 4 IGBTs offers highest efficiencies available • Optimized for specific application conditions • HEXFRED diodes ...
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