Part Number
|
IRG4BH20K-S |
Manufacturer
|
International Rectifier |
Description
|
INSULATED GATE BIPOLAR TRANSISTOR |
Published
|
Feb 27, 2015 |
Detailed Description
|
PD -93960
IRG4BH20K-S
INSULATED GATE BIPOLAR TRANSISTOR
Features
• High short circuit rating optimized for motor cont...
|
Datasheet
|
IRG4BH20K-S
|
Overview
PD -93960
IRG4BH20K-S
INSULATED GATE BIPOLAR TRANSISTOR
Features
• High short circuit rating optimized for motor control, tsc =10µs @ VCC = 720V , TJ = 125°C, VGE = 15V
• Combines low conduction losses with high switching speed
• Latest generation design provides tighter parameter distribution and higher efficiency than previous generations
• Industry standard D2Pak package
Benefits
• As a Freewheeling Diode we recommend our HEXFREDTM ultrafast, ultrasoft recovery diodes for minimum EMI / Noise and switching losses in the Diode and IGBT
• Latest generation 4 IGBT's offer highest power density motor controls possible
C
G E
n-channel
Short Circuit Rated UltraFast IGBT
VCES = 1200V VCE(on)...
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