com PD -94274A IRG4MC50F INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • • Electrically Isolated and Hermetically Sealed Simple Drive Requirements Latch-proof Fast Speed operation 3 kHz - 8 kHz High operating frequency Switching-loss rating includes all "tail" losses Ceramic eyelets C Fast Speed IGBT VCES = 600V G E VCE(on) max = 2.
0V @VGE = 15V, IC = 30A n-channel Benefits • Generation 4 IGBT's offer highest efficiency available • IGBT's optimized for specified application conditions • Designed to be a "drop-in" replacement for equivalent IR Hi-Rel Generation 3 IGBT's Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable curr...

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)