Part Number
|
IRG4PC60F-PPBF |
Manufacturer
|
International Rectifier |
Description
|
INSULATED GATE BIPOLAR TRANSISTOR |
Published
|
Jan 8, 2007 |
Detailed Description
|
com
PD - 95567
IRG4PC60F-PPbF
INSULATED GATE BIPOLAR TRANSISTOR
Features
Fast: Optimized for medium ...
|
Datasheet
|
IRG4PC60F-PPBF
|
Overview
com
PD - 95567
IRG4PC60F-PPbF
INSULATED GATE BIPOLAR TRANSISTOR
Features
Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, 20 kHz in resonant mode).
Generation 4 IGBT design provides tighter parameter distribution and higher efficiency.
Solder plated version of industry standard TO-247AC package.
Lead-Free
C
Fast Speed IGBT
VCES = 600V
G E
VCE(on) typ.
= 1.
50V
@VGE = 15V, IC = 60A
n-channel
Benefits
Generation 4 IGBT's offer highest efficiency available.
IGBT's optimized for specified application conditions.
Solder plated version of the TO-247 allows the reflow soldering of the package heatsink to a substrate material.
Desig...
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