Part Number
|
IRG4PC60F |
Manufacturer
|
International Rectifier |
Description
|
INSULATED GATE BIPOLAR TRANSISTOR |
Published
|
Jan 8, 2007 |
Detailed Description
|
www.DataSheet4U.com
PD - 94442
IRG4PC60F
INSULATED GATE BIPOLAR TRANSISTOR
Features
• Fast: Optimized for medium opera...
|
Datasheet
|
IRG4PC60F
|
Overview
www.
DataSheet4U.
com
PD - 94442
IRG4PC60F
INSULATED GATE BIPOLAR TRANSISTOR
Features
• Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, 20 kHz in resonant mode).
• Generation 4 IGBT design provides tighter parameter distribution and higher efficiency.
• Industry standard TO-247AC package.
C
Fast Speed IGBT
VCES = 600V
G E
VCE(on) typ.
= 1.
50V
@VGE = 15V, IC = 60A
n-channel
Benefits
• Generation 4 IGBT's offer highest efficiency available • IGBT's optimized for specified application conditions • Designed for best performance when used with IR Hexfred & IR Fred companion diodes.
TO-247AC
Absolute Maximum Ratings
Parameter
VCES IC @ TC = 25°C IC @ TC = 100°C...
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