Part Number
|
IRG4PH50KD |
Manufacturer
|
IRF |
Description
|
INSULATED GATE BIPOLAR TRANSISTOR |
Published
|
Jun 29, 2005 |
Detailed Description
|
PD- 91575B
IRG4PH50KD
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Features
• High short circui...
|
Datasheet
|
IRG4PH50KD
|
Overview
PD- 91575B
IRG4PH50KD
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Features
• High short circuit rating optimized for motor control, tsc =10µs, VCC = 720V , TJ = 125°C, VGE = 15V • Combines low conduction losses with high switching speed • Tighter parameter distribution and higher efficiency than previous generations • IGBT co-packaged with HEXFREDTM ultrafast, ultrasoft recovery antiparallel diodes
C
Short Circuit Rated UltraFast IGBT
VCES = 1200V
G E
VCE(on) typ.
= 2.
77V
@VGE = 15V, IC = 24A
n-ch an nel
Benefits
• Latest generation 4 IGBT's offer highest power density motor controls possible • HEXFREDTM diodes optimized for performance with IGBTs.
Minimized re...
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