Part Number
|
IRG7PH35UD-EP |
Manufacturer
|
International Rectifier |
Description
|
INSULATED GATE BIPOLAR TRANSISTOR |
Published
|
Apr 25, 2011 |
Detailed Description
|
PD-96288
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features
• • • • • • • • Low VCE (ON) tre...
|
Datasheet
|
IRG7PH35UD-EP
|
Overview
PD-96288
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features
• • • • • • • • Low VCE (ON) trench IGBT technology Low switching losses Square RBSOA 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficient Ultra fast soft recovery co-pak diode Tight parameter distribution Lead-Free
IRG7PH35UDPbF IRG7PH35UD-EP
C
VCES = 1200V I NOMINAL = 20A
G E
TJ(max) = 150°C
Benefits
• High efficiency in a wide range of applications • Suitable for a wide range of switching frequencies due to low VCE (ON) and low switching losses • Rugged transient performance for increased reliability • Excellent current sharing in parallel operation
n-channel
C
VCE(on) t...
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