PD -90717B
IRGMC40U
INSULATED GATE BIPOLAR TRANSISTOR
Features
• • • • • Electrically Isolated and Hermetically Sealed Simple Drive Requirements Latch-proof Fast Speed operation 10 kHz Switching-loss rating includes all "tail" losses
C
Ultra Fast Speed IGBT
VCES = 600V
G E
VCE(on) max = 2.
0V
@VGE = 15V, IC = 20A
Description
n-channel
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power
MOSFET.
They provide substantial benefits to a host of high-
voltage, high-current applications.
The performance of various IG...