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Part Number
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IRGP20B120UD-E |
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Manufacturer
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IRF |
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Description
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INSULATED GATE BIPOLAR TRANSISTOR |
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Published
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Aug 23, 2005 |
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Detailed Description
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PD- 93817
IRGP20B120UD-E
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Features
• UltraFast Non ...
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Datasheet
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IRGP20B120UD-E
|
Overview
PD- 93817
IRGP20B120UD-E
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Features
• UltraFast Non Punch Through (NPT) Technology • Low Diode VF (1.
67V Typical @ 20A & 25°C) • 10 µs Short Circuit Capability • Square RBSOA • UltraSoft Diode Recovery Characteristics • Positive VCE(on) Temperature Coefficient • Extended Lead TO-247AD Package
C
UltraFast CoPack IGBT
VCES = 1200V VCE(on) typ.
= 3.
05V
G
VGE = 15V, IC = 20A, 25°C
E
N-channel
Benefits
• Benchmark Efficiency Above 20KHz • Optimized for Welding, UPS, and Induction Heating Applications • Rugged with UltraFast Performance • Low EMI • Significantly Less Snubber Required • Excellent Current Sharing in Parallel Op...
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