Part Number
|
IRGP4069DPbF |
Manufacturer
|
International Rectifier |
Description
|
INSULATED GATE BIPOLAR TRANSISTOR |
Published
|
Mar 8, 2016 |
Detailed Description
|
PD - 97425
IRGP4069DPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
IRGP4069D-EPbF
Features...
|
Datasheet
|
IRGP4069DPbF
|
Overview
PD - 97425
IRGP4069DPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
IRGP4069D-EPbF
Features
• Low VCE (ON) Trench IGBT Technology • Low Switching Losses
• Maximum Junction Temperature 175 °C
• 5 μS short circuit SOA
• Square RBSOA
• 100% of The Parts Tested for ILM • Positive VCE (ON) Temperature Coefficient • Tight Parameter Distribution
• Lead Free Package
C
G E
n-channel
VCES = 600V IC(Nominal) = 35A tSC ≥ 5μs, TJ(max) = 175°C VCE(on) typ.
= 1.
6V
Benefits
• High Efficiency in a Wide Range of Applications
• Suitable for a Wide Range of Switching Frequencies due to
Low VCE (ON) and Low Switching Losses • Rugged Transient Performance for Increased Reliability
...
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