com
PD-96916
RADIATION HARDENED POWER
MOSFET SURFACE MOUNT (TO-254AA Tabless)
Product Summary
Part Number Radiation Level IRHMJ57160 100K Rads (Si) IRHMJ53160 IRHMJ54160 300K Rads (Si) 600K Rads (Si) RDS(on) 0.
018Ω 0.
018Ω 0.
018Ω 0.
019Ω ID 35A* 35A* 35A* 35A*
IRHMJ57160 100V, N-CHANNEL
5
TECHNOLOGY
IRHMJ58160 1000K Rads (Si)
TO-254AA Tabless
International Rectifier’s R5TM technology provides high performance power
MOSFETs for space applications.
These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)).
The combination of low RDS(on) and low gate charge reduces the power losses in switching applic...