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PD-96914
RADIATION HARDENED POWER
MOSFET RAD Hard HEXFET SURFACE MOUNT (TO-254AA Tabless)
™
IRHMJ7250 200V, N-CHANNEL
®
TECHNOLOGY
Product Summary
Part Number Radiation Level IRHMJ7250 100K Rads (Si) IRHMJ3250 300K Rads (Si) IRHMJ4250 IRHMJ8250 600K Rads (Si) 1000K Rads (Si) RDS(on) 0.
10 Ω 0.
10 Ω 0.
10 Ω 0.
10 Ω ID 26A 26A 26A 26A
TO-254AA Tabless
International Rectifier’s RADHard HEXFET® technology provides high performance power
MOSFETs for space applications.
This technology has over a decade of proven performance and reliability in satellite applications.
These devices have been characterized for both Total Dose and Single Event Effects (SEE).
The combination of ...