PD - 91754A
RADIATION HARDENED POWER
MOSFET SURFACE MOUNT(SMD-3)
Product Summary
Part Number IRHNB7Z60 IRHNB3Z60 IRHNB4Z60 IRHNB8Z60 Radiation Level 100K Rads (Si) 300K Rads (Si) 600K Rads (Si) 1000K Rads (Si) RDS(on) 0.
009Ω 0.
009Ω 0.
009Ω 0.
009Ω ID 75*A 75*A 75*A 75*A
IRHNB7Z60 30V, N-CHANNEL
RAD-Hard HEXFET TECHNOLOGY
™ ®
SMD-3
International Rectifier’s RADHard technology provides high performance power
MOSFETs for space applications.
This technology has over a decade of proven performance and reliability in satellite applications.
These devices have been characterized for both Total Dose and Single Event Effects (SEE).
The combination of low Rds(on) and low gate charge reduces the power...