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PD - 94211A
IRHQ57110 RADIATION HARDENED POWER
MOSFET SURFACE MOUNT (LCC-28)
Product Summary
Part Number Radiation Level IRHQ57110 100K Rads (Si) IRHQ53110 IRHQ54110 300K Rads (Si) 600K Rads (Si) RDS(on) 0.
27Ω 0.
27Ω 0.
27Ω 0.
29Ω ID 4.
6A 4.
6A 4.
6A 4.
6A
100V, Quad N-CHANNEL
RAD-Hard HEXFET
™ ®
4 # TECHNOLOGY
IRHQ58110 1000K Rads (Si)
LCC-28
International Rectifier’s RAD-HardTM HEXFET®
MOSFET Technology provides high performance power
MOSFETs for space applications.
This technology has over a decade of proven performance and reliability in satellite applications.
These devices have been characterized for both Total Dose and Single Event Effects (SEE).
The combination ...