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PD - 91781B
IRHQ6110 RADIATION HARDENED 100V, Combination 2N-2P-CHANNEL RAD-Hard HEXFET POWER
MOSFET MOSFET TECHNOLOGY SURFACE MOUNT (LCC-28)
™ ®
Product Summary
Part Number Radiation Level RDS(on) IRHQ6110 100K Rads (Si) 0.
6Ω IRHQ63110 300K Rads (Si) 0.
6Ω IRHQ6110 100K Rads (Si) 1.
1Ω IRHQ63110 300K Rads (Si) 1.
1Ω ID 3.
0A 3.
0A -2.
3A -2.
3A CHANNEL N N P P
LCC-28
International Rectifier’s RAD-HardTM HEXFET®
MOSFET Technology provides high performance power
MOSFETs for space applications.
This technology has over a decade of proven performance and reliability in satellite applications.
These devices have been characterized for both Total Dose and Single Event Effects (S...