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PD -95576
Logic-Level Gate Drive l Advanced Process Technology l Surface Mount (IRL1104S) l Low-profile through-hole (IRL1104L) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description
l
IRL1104SPbF IRL1104LPbF
HEXFET® Power
MOSFET
D
VDSS = 40V RDS(on) = 0.
008Ω
G
ID = 104A
S
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in...