PD- 95587
IRL3302SPbF
HEXFET® Power
MOSFET
D
VDSS = 20V RDS(on) = 0.
020Ω
G
Lead-Free
S
ID = 39A
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07/20/04
IRL3302SPbF
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IRL3302SPbF
Peak Diode Recovery dv/dt Test Circuit
+
Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer
+ +
-
• dv/dt controlled by RG • ISD controlled by Duty Factor "D" • D.
U.
T.
- Device Under Test
+ -
*
Reverse Polarity for P-Channel ** Use P-Channel Driver for P-Channel Measurements
Driver Gate Drive P.
W.
Period D=
P.
W.
Perio...