www.
DataSheet4U.
com
Logic-Level Gate Drive Advanced Process Technology l Surface Mount (IRL3303S) l Low-profile through-hole (IRL3303L) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description
l l
HEXFET® Power
MOSFET
D
IRL3303LPbF IRL3303SPbF
VDSS = 30V RDS(on) = 0.
026Ω
PD - 95578
G
ID = 38A
S
Absolute Maximum Ratings
ID @ TC = 25°C ID @ TC = 100°C IDM PD @TA = 25°C PD @TC = 25°C V GS EAS IAR EAR dv/dt TJ TSTG
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device design that HE...