PD - 93757C
IRLML2502
HEXFET® Power
MOSFET
l l l l l l
Ultra Low On-Resistance N-Channel
MOSFET SOT-23 Footprint Low Profile (1.
1mm) Available in Tape and Reel Fast Switching
G 1 3 D S 2
VDSS = 20V RDS(on) = 0.
045Ω
Description
These N-Channel
MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power
MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in battery and load management.
A thermally enhanced large pad leadframe has been incorporated into the standar...