IRLML2502PbF
l Ultra Low On-Resistance l N-Channel
MOSFET l SOT-23 Footprint l Low Profile (1.
1mm) l Available in Tape and Reel l Fast Switching l Lead-Free l RoHS Compliant, Halogen-Free
HEXFET® Power
MOSFET
G1
VDSS = 20V
3D
RDS(on) = 0.
045Ω
S2
Description
These N-Channel
MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low onresistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® power
MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in battery and load management.
A thermally enhanced large pad leadframe has been i...