PD- 93758D
IRLMS2002
HEXFET® Power
MOSFET
l l l l l
Ultra Low On-Resistance N-Channel
MOSFET Surface Mount Available in Tape & Reel 2.
5V Rated
D D G
1
6
A D
VDSS = 20V
2 5
D S
3
4
RDS(on) = 0.
030Ω
Description
These N-Channel
MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area.
This benefit provides the designer with an extremely efficient device for use in battery and load management applications.
The Micro6 package with its customized leadframe produces a HEXFET power
MOSFET with RDS(on) 60% less than a similar size SOT-23.
This package is ideal for applications where printed circuit board spac...