PD - 91414C
IRLMS6702
HEXFET® Power
MOSFET
l l l l
Generation V Technology Micro6 Package Style Ultra Low RDS(on) P-Channel
MOSFET
D
1
6
A D
VDSS = -20V RDS(on) = 0.
20Ω
D
2
5
D
Description
Fifth Generation HEXFET® power
MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® power
MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The Micro6 package with its customized leadframe produces a HEXFET® power
MOSFET with RDS(on...