PD - 95552A
AUTOMOTIVE
MOSFET
Features
l l l l l l l
HEXFET® Power
MOSFET
D
IRLR2908PbF IRLU2908PbF
VDSS = 80V RDS(on) = 28m Ω
Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free
G S
ID = 30A
Description
Specifically designed for Automotive applications, this HEXFET ® Power
MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.
Additional features of this HEXFET power
MOSFET are a 175°C junction operating temperature, low RθJC, fast switching speed and improved repetitive avalanche rating.
These features combine to make t...