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AUTOMOTIVE
MOSFET
Features
Logic Level Advanced Process Technology lUltra Low On-Resistance l175°C Operating Temperature lFast Switching lRepetitive Avalanche Allowed up to Tjmax
l l
IRLR3705Z IRLU3705Z
HEXFET® Power
MOSFET
D
VDSS = 55V RDS(on) = 8.
0mΩ
Description
Specifically designed for Automotive applications, this HEXFET® Power
MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.
Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating .
These features combine to make this design an extremely efficient and reliable ...