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IRLZ14S, IRLZ14L, SiHLZ14S, SiHLZ14L
Vishay Siliconix
Power
MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg (Max.
) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 5 V 8.
4 3.
5 6.
0 Single
D
FEATURES
60 0.
20
• Halogen-free According to IEC 61249-2-21 Definition • Advanced Process Technology • Surface Mount (IRLZ14S, SiHLZ14S) • Low-Profile Through-Hole (IRLZ14L, SiHLZ14L) • 175 °C Operating Temperature • Fast Switching • Compliant to RoHS Directive 2002/95/EC Third generation Power
MOSFETs from Vishay utilize advanced processing techniques to achieve extermely low on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device design t...