HCMOS STRUCTURED ARRAY
ISB35000 SERIES HCMOS STRUCTURED ARRAY PRELIMINARY DATA FEATURES 0.5 micron triple layer metal HCMOS process featuring retrograde well technology, low resistance salicided active areas, polysilicide gates and thin metal oxide. 3.3 V optimized transistor with 5 V I/O interface capability 2 - input NAND delay of 0.210 ns (typ) with fanout = 2. Broad I/O funct...
STMicroelectronics