ISL9N2357D3ST
Data Sheet June 2002
30V, 0.
007 Ohm, 35A, N-Channel UltraFET® Trench Power
MOSFET
UltraFET® Trench from Fairchild is a new advanced
MOSFET technology that achieves the lowest possible onresistance per silicon area while maintaining fast switching and low gate charge.
The reduced conduction and switching losses extend battery life in notebook PCs, cellular telephones and other portable information appliances and improve the overall efficiency of high frequency DC-DC converters used to power the latest microprocessors.
UltraFET® Trench
Features
• rDS(ON) = 0.
006Ω Typical, VGS = 10V • Qg Total 85nC Typical, VGS = 10V • Qgd 16nC Typical • CISS 5600pF Typical
Packaging
ISL9N2357D...