ISL9N306AP3/ISL9N306AS3ST
February 2002
ISL9N306AP3/ISL9N306AS3ST
N-Channel Logic Level PWM Optimized UltraFET® Trench Power
MOSFETs
General Description
This device employs a new advanced trench
MOSFET technology and features low gate charge while maintaining low on-resistance.
Optimized for switching applications, this device improves the overall efficiency of DC/DC converters and allows operation to higher switching frequencies.
Features
• Fast switching • rDS(ON) = 0.
0052Ω (Typ), VGS = 10V • rDS(ON) = 0.
0085Ω (Typ), VGS = 4.
5V • Qg (Typ) = 30nC, VGS = 5V • Qgd (Typ) = 11nC • CISS (Typ) = 3400pF
Applications
• DC/DC converters
DRAIN (FLANGE)
SOURCE DRAIN GATE D
GATE G SOURCE DRAIN (...