ISL9N307AP3/ISL9N307AS3ST
January 2002
ISL9N307AP3/ISL9N307AS3ST
N-Channel Logic Level PWM Optimized UltraFET® Trench Power
MOSFETs
General Description
This device employs a new advanced trench
MOSFET technology and features low gate charge while maintaining low on-resistance.
Optimized for switching applications, this device improves the overall efficiency of DC/DC converters and allows operation to higher switching frequencies.
Features
• Fast switching • rDS(ON) = 0.
006Ω (Typ), VGS = 10V • rDS(ON) = 0.
010Ω (Typ), VGS = 4.
5V • Qg (Typ) = 28nC, VGS = 5V • Qgd (Typ) = 10nC • CISS (Typ) = 3000pF
DRAIN (FLANGE) SOURCE DRAIN GATE D
Applications
• DC/DC converters
GATE SOURCE G DRAIN (FLANG...