ISL9N308AD3 / ISL9N308AD3ST
June 2002
PWM Optimized
ISL9N308AD3 / ISL9N308AD3ST
N-Channel Logic Level UltraFET® Trench Power
MOSFETs 30V, 50A, 8mΩ
General Description
This device employs a new advanced trench
MOSFET technology and features low gate charge while maintaining low on-resistance.
Optimized for switching applications, this device improves the overall efficiency of DC/DC converters and allows operation to higher switching frequencies.
Features
• Fast switching • rDS(ON) = 0.
0064Ω (Typ), VGS = 10V • rDS(ON) = 0.
010Ω (Typ), VGS = 4.
5V • Qg (Typ) = 24nC, VGS = 5V • Qgd (Typ) = 8nC • CISS (Typ) = 2600pF
Applications
• DC/DC converters
D G
G
D
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