ISL9N322AD3ST
January 2002
PWM Optimized
ISL9N322AD3ST
N-Channel Logic Level UltraFET® Trench
MOSFET 30V, 20A, 0.
022Ω
General Description
This device employs a new advanced trench
MOSFET technology and features low gate charge while maintaining low on-resistance.
Optimized for switching applications, this device improves the overall efficiency of DC/DC converters and allows operation to higher switching frequencies.
Features
• Fast switching • rDS(ON) = 0.
018Ω (Typ), VGS = 10V • rDS(ON) = 0.
028Ω (Typ), VGS = 4.
5V • Qg (Typ) = 9nC, VGS = 5V • Qgd (Typ) =3nC • CISS (Typ) =970pF
Applications
• DC/DC converters
DRAIN (FLANGE)
D
GATE SOURCE
G S
TO-252
MOSFET Maximum Ratings TA=25°C unle...