ISL9N7030BLP3, ISL9N7030BLS3ST
Data Sheet January2002
30V, 0.
009 Ohm, 75A, N-Channel Logic Level UltraFET® Trench Power
MOSFETs
This device employs a new advanced trench
MOSFET technology and features low gate charge while maintaining low on-resistance.
Optimized for switching applications, this device improves the overall efficiency of DC/DC converters and allows operation to higher switching frequencies.
PWM Optimized Features
• • • • • • Fast Switching rDS(ON) = 0.
0064Ω (Typ), VGS = 10V rDS(ON) = 0.
010Ω (Typ), VGS = 4.
5V Qg Total 24nC (Typ), VGS = 5V Qgd (Typ) .
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11nC CISS (Typ) .
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