Advanced Technical Information
High
Voltage BI
MOSFETTM
in High
Voltage ISOPLUS i4-PACTM Monolithic Bipolar MOS Transistor
IXBF 9N140 IC25 IXBF 9N160 VCES
VCE(sat) tf
= = = =
7A 1400/1600 V 4.
9V 40 ns
1 5
IGBT Symbol VCES VGES IC25 IC90 ICM VCEK Ptot TC = 25°C TC = 90°C VGE = 15/0 V; RG = 100 W; TVJ = 125°C RBSOA, Clamped inductive load; L = 100 µH TC = 25°C Conditions TVJ = 25°C to 150°C IXBF 9N140 IXBF 9N160 Maximum Ratings 1400 1600 ± 20 7 4 12 0.
8VCES 70 V V V A A A W
Features • High
Voltage BI
MOSFETTM - substitute for high
voltage MOSFETs with significantly lower
voltage drop - fast switching for high frequency operation - reverse conduction capability • ISOPLUS i4-PACTM high volt...