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High
Voltage BI
MOSFETTM Monolithic Bipolar MOS Transistor
N-Channel, Enhancement Mode
IXBH 40N140 IXBH 40N160
VCES IC25 VCE(sat) tfi
TO-247 AD
= = = =
1400/1600 V 33 A 6.
2 V typ.
40 ns
C G
G C E E G = Gate, E = Emitter, C = Collector, TAB = Collector
C (TAB)
Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg TL Md Weight
Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW Continuous Transient TC = 25°C, TC = 90°C TC = 25°C, 1 ms
Maximum Ratings 40N140 40N160 1400 1400 1600 1600 ±20 ±30 33 20 40 ICM = 40 350 -55 .
.
.
+150 150 -55 .
.
.
+150 V V V V A A A A W °C °C °C °C
Features • International standard package JEDEC TO-247 AD • High Vol...