High
Voltage, High Gain BI
MOSFETTM Monolithic Bipolar MOS Transistor
IXBH6N170 IXBT6N170
VCES = IC90 = VCE(sat) ≤
1700V 6A 3.
4V
Symbol
VCES VCGR
VGES VGEM
IC25 IC90 ICM
SSOA (RBSOA)
PC
TJ TJM Tstg
TTLSOLD Md
Weight
Test Conditions TC = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1ms VGE = 15V, TVJ = 125°C, RG = 24Ω Clamped inductive load TC = 25°C
1.
6mm (0.
062 in.
) from case for 10s Plastic body for 10 seconds Mounting torque (TO-247) TO-247 TO-268
Maximum Ratings
1700 1700
V V
± 20 ± 30
V V
12 A 6A
36 A
ICM = 16 VCES ≤ 1350
75
A V
W
-55 .
.
.
+150 150
-55 .
.
.
+150
°C °C °C
300 260
1.
13/10
°C °C
Nm/lb.
in.
6g 4g
Symbol
Test...