High
Voltage IGBT with optional Diode
Short Circuit SOA Capability Square RBSOA
IXDH 20N120 VCES = 1200 V = 38 A IXDH 20N120 D1 IC25 VCE(sat) typ = 2.
4 V
C G G
C
TO-247 AD
G C
E IXDH 20N120
E IXDH 20N120 D1
E
C (TAB)
G = Gate, C = Collector ,
E = Emitter TAB = Collector
Symbol VCES VCGR VGES VGEM IC25 IC90 ICM RBSOA tSC (SCSOA) PC TJ Tstg
Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 20 kW Continuous Transient TC = 25°C TC = 90°C TC = 90°C, tp = 1 ms VGE = ±15 V, TJ = 125°C, RG = 82 W Clamped inductive load, L = 30 µH VGE = ±15 V, VCE = VCES, TJ = 125°C RG = 82 W, non repetitive TC = 25°C IGBT Diode
Maximum Ratings 1200 1200 ±20 ±30 38 25 50 ICM = 35 VCEK VCES 10 20...