SiC Power
MOSFET
IXFN50N120SiC
preliminary
ID25 = 47 A VDSS = 1200 V R =DS(on) max 50 mΩ
Part number IXFN50N120SiC
D (3)
S G
S D
Backside: isolated UL pending
G (2)
S (1, 4)
Features / Advantages:
• High speed switching with low capacitances • High blocking
voltage with low RDS(on) • Easy to parallel and simple to drive • Avalanche ruggedness • Resistant to latch-up
Applications:
• Solar inverters • High
voltage DC/DC converters • Motor drives • Switch mode power supplies • UPS • Battery chargers • Induction heating
Package: SOT-227B (minibloc)
• Isolation
Voltage: 3000 V~ • Industry standard outline • RoHS compliant • Epoxy meets UL 94V-0 • Base plate with Aluminium nitride ...